Metal–insulator transition in a transition metal dichalcogenide: Dependence on metal contacts
نویسندگان
چکیده
منابع مشابه
Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors
Among various 2D materials, monolayer transition-metal dichalcogenide (mTMD) semiconductors with intrinsic band gaps (1–2 eV) are considered promising candidates for channel materials in next-generation transistors. Low-resistance metal contacts to mTMDs are crucial because currently they limit mTMD device performances. Hence, a comprehensive understanding of the atomistic nature of metal conta...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2018
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/969/1/012105